Gate Leakage vs. NBTI in Plasma Nitrided Oxides: Characterization, Physical Principles, and Optimization

Author

Islam, A.E. ; Gupta, G. ; Mahapatra, S. ; Krishnan, A.T. ; Ahmed, K. ; Nouri, F. ; Oates, A. ; Alam, M.A.

Author_Institution

Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

Since nitrided oxides improve gate leakage at the expense of NBTI, one must optimize nitrogen concentration in oxinitride samples for reliable performance and reduced power dissipation. Here, we analyze wide range of NBTI stress data to develop a predictive model for gate leakage and first self-consistent model for field acceleration within R-D framework. This model anticipates a novel design diagram for co-optimization of leakage and NBTI for arbitrary nitrogen concentration and effective oxide thickness

Keywords

MOSFET; leakage currents; semiconductor device models; NBTI stress data; field acceleration; gate leakage; leakage co-optimization; negative bias temperature instability; nitrogen concentration; oxinitride samples; plasma nitrided oxides; self-consistent model; Computer aided manufacturing; Gate leakage; Leakage current; Niobium compounds; Nitrogen; Plasmas; Power dissipation; Stress; Titanium compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346775

Filename

4154194