Title :
Gate Leakage vs. NBTI in Plasma Nitrided Oxides: Characterization, Physical Principles, and Optimization
Author :
Islam, A.E. ; Gupta, G. ; Mahapatra, S. ; Krishnan, A.T. ; Ahmed, K. ; Nouri, F. ; Oates, A. ; Alam, M.A.
Author_Institution :
Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
Abstract :
Since nitrided oxides improve gate leakage at the expense of NBTI, one must optimize nitrogen concentration in oxinitride samples for reliable performance and reduced power dissipation. Here, we analyze wide range of NBTI stress data to develop a predictive model for gate leakage and first self-consistent model for field acceleration within R-D framework. This model anticipates a novel design diagram for co-optimization of leakage and NBTI for arbitrary nitrogen concentration and effective oxide thickness
Keywords :
MOSFET; leakage currents; semiconductor device models; NBTI stress data; field acceleration; gate leakage; leakage co-optimization; negative bias temperature instability; nitrogen concentration; oxinitride samples; plasma nitrided oxides; self-consistent model; Computer aided manufacturing; Gate leakage; Leakage current; Niobium compounds; Nitrogen; Plasmas; Power dissipation; Stress; Titanium compounds; Voltage;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346775
