Title :
New RF intrinsic parameters extraction procedure for advanced MOS transistors
Author :
Tinoco, J.C. ; Martinez-Lopez, A.G. ; Emam, M. ; Raskin, J. -P
Author_Institution :
Dept. de Ing. en Telecomun., Univ. Nac. Autonoma de Mexico, Mexico, Mexico
Abstract :
A new extraction method of the intrinsic parameters of the small-signal equivalent circuit model of SOI MOS transistors (MOSFET) is presented. This new method does not need the previous knowledge of the extrinsic series resistances, moreover, it is possible to directly determine the intrinsic parameters at the bias point of interest. Floating-Body SOI MOSFETs are analyzed using this method.
Keywords :
MOSFET; equivalent circuits; silicon-on-insulator; RF intrinsic parameters extraction procedure; SOI MOS transistors; floating-Body SOI MOSFET; small-signal equivalent circuit model; CMOS technology; Capacitance; Electrical resistance measurement; Equivalent circuits; MOSFET circuits; Parameter extraction; Radio frequency; Scattering parameters; Silicon on insulator technology; Transmission line matrix methods; Intrinsic parameters; MOSFET; RF characterization; SOI technology; small-signal equivalent circuit;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-6912-3
Electronic_ISBN :
978-1-4244-6914-7
DOI :
10.1109/ICMTS.2010.5466853
