DocumentCode
2386190
Title
Evaluation of a Non-Volatile FPGA based on MRAM technology
Author
Zhao, W. ; Belhaire, E. ; Javerliac, V. ; Chappert, C. ; Dieny, B.
Author_Institution
Inst. d´´Electronique Fondamentale, Univ. Paris Sud, Orsay
fYear
0
fDate
0-0 0
Firstpage
1
Lastpage
4
Abstract
In this paper, we propose a new structure of FPGA based on MRAM technology; we name it MFPGA (magnetic FPGA). FPGA based on SRAM technology has been developed in the last years, because of its high speed and near limitless number of reprogramming, however SRAM is volatile thereby the configuration information and the intermediate data will be lost when power is turned off. By using MTJs (magnetic tunnel junction) as the storage elements of FPGA, we can realize the non-volatility of FPGA, and then we will not need the external memory. In our simulation, the start-up time of circuit can be decreased up to some hundred pico seconds. Except for the rapid start-up time, we can also configure the algorithm and logic function of the FPGA circuit very simply and rapidly. The other advantage of using MRAM technology is that we will not enlarge the circuit surface, because the storage element MTJs are on the semiconductor surface
Keywords
field programmable gate arrays; magnetic storage; magnetic tunnelling; random-access storage; MRAM technology; field programmable gate arrays; logic function; magnetic FPGA; magnetic random access memory; magnetic tunnel junction; nonvolatile FPGA; Circuit simulation; Context modeling; Field programmable gate arrays; Logic circuits; Magnetic circuits; Magnetic semiconductors; Magnetic tunneling; Nonvolatile memory; Random access memory; Registers; FPGA; LUT; MRAM; MTJ; Magnetic; Multi-context; Register; SRAM; high speed; non-volatile;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
Conference_Location
Padova
Print_ISBN
1-4244-0097-X
Type
conf
DOI
10.1109/ICICDT.2006.220782
Filename
1669369
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