Title :
Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric
Author :
Shen, C. ; Li, M.-F. ; Foo, C.E. ; Yang, T. ; Huang, D.M. ; Yap, A. ; Samudra, G.S. ; Yeo, Y.C.
Author_Institution :
Dept. of ECE, National Univ. of Singapore
Abstract :
Highly reliable characterization of fast transient in NBTI is achieved by performing initial and stressed I-V measurements in ultra-short time (100 ns). We further provide evidences that reaction-diffusion (R-D) model can not explain the fast transient in NBTI, while hole trapping (HT) model explains all experimental observations. We also establish that previous on-the-fly methods are sound except for the slow initial measurement. This caused the apparent disagreements among results from different groups using on-the-fly methods, which is resolved in this work by the fast on-the-fly technique
Keywords :
MOSFET; dielectric materials; semiconductor device reliability; silicon compounds; 100 ns; SiON; SiON dielectric; fast Vth transient; hole trapping model; negative bias temperature instability; pMOSFET; reaction-diffusion model; Degradation; Dielectric measurements; MOSFETs; Microelectronics; Niobium compounds; Predictive models; Semiconductor device manufacture; Stress measurement; Time measurement; Titanium compounds;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346776
