Title :
Orientation dependence and asymmetry of subthreshold characteristics in CMOSFETs
Author :
Matsuda, T. ; Matsumura, Y. ; Iwata, H. ; Ohzone, T.
Author_Institution :
Dept. of Inf. Syst. Eng., Toyama Prefectural Univ., Imizu, Japan
Abstract :
Orientation dependence and asymmetry of VT (threshold voltage), gm (transconductance), S (subthreshold slope), and Ioff (off-state current at VG =3D 0 V) in 0.18 ¿m n-MOSFETs were measured and analyzed. The test structure contains 8 different channel orientation angles of 0°/45°/90° and three kinds of process conditions. Although VT, gm and S scarcely show particular anisotropy except for the variation of MOSFET structure and/or impurity profile, the orientation dependence of GIDL characteristics is observed in the wafer with the higher extension dose.
Keywords :
MOSFET; semiconductor device testing; CMOSFET; GIDL characteristics; MOSFET structure; impurity profile; n-MOSFET; off-state current; orientation dependence; size 0.18 mum; subthreshold characteristics; subthreshold slope; threshold voltage; transconductance; CMOS analog integrated circuits; CMOS technology; CMOSFETs; Current measurement; MOSFET circuits; Semiconductor device measurement; Subthreshold current; Testing; Threshold voltage; Transconductance; CMOSFETs; GIDL; Subthreshold current; asymmetry;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-6912-3
Electronic_ISBN :
978-1-4244-6914-7
DOI :
10.1109/ICMTS.2010.5466854
