Title :
MOSFET-array for extracting parameters expressing SPICE-parameter variation
Author :
Terada, Kazuo ; Ekida, Naoya ; Tsuji, Katsuhiro ; Tsunomura, Takaaki ; Nishida, Akio
Author_Institution :
Fac. of Inf. Sci., Hiroshima City Univ., Hiroshima, Japan
Abstract :
Parameters in Pelgrom´s model, which express SPICE-model parameter variations, are evaluated using MOSFET array which has 16K DUTs and is made using 65-nm technology. It is found that the parameters expressing the random component of the variation are dominant, and that the parameters expressing the systematic component are mainly determined by the gate-insulator thickness.
Keywords :
MOSFET; SPICE; random processes; DUT; MOSFET-array; Pelgrom´s model; SPICE-model parameter variations; SPICE-parameter variation; gate-insulator thickness; random component; size 65 nm; Circuit simulation; Cities and towns; Data mining; Intrusion detection; MOSFET circuits; Microelectronics; Parameter extraction; SPICE; Semiconductor device measurement; Testing; MOSFET array; Parameter extraction; Parameter variation; SPICE model;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-6912-3
Electronic_ISBN :
978-1-4244-6914-7
DOI :
10.1109/ICMTS.2010.5466855
