• DocumentCode
    2386227
  • Title

    MOSFET-array for extracting parameters expressing SPICE-parameter variation

  • Author

    Terada, Kazuo ; Ekida, Naoya ; Tsuji, Katsuhiro ; Tsunomura, Takaaki ; Nishida, Akio

  • Author_Institution
    Fac. of Inf. Sci., Hiroshima City Univ., Hiroshima, Japan
  • fYear
    2010
  • fDate
    22-25 March 2010
  • Firstpage
    76
  • Lastpage
    79
  • Abstract
    Parameters in Pelgrom´s model, which express SPICE-model parameter variations, are evaluated using MOSFET array which has 16K DUTs and is made using 65-nm technology. It is found that the parameters expressing the random component of the variation are dominant, and that the parameters expressing the systematic component are mainly determined by the gate-insulator thickness.
  • Keywords
    MOSFET; SPICE; random processes; DUT; MOSFET-array; Pelgrom´s model; SPICE-model parameter variations; SPICE-parameter variation; gate-insulator thickness; random component; size 65 nm; Circuit simulation; Cities and towns; Data mining; Intrusion detection; MOSFET circuits; Microelectronics; Parameter extraction; SPICE; Semiconductor device measurement; Testing; MOSFET array; Parameter extraction; Parameter variation; SPICE model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
  • Conference_Location
    Hiroshima
  • Print_ISBN
    978-1-4244-6912-3
  • Electronic_ISBN
    978-1-4244-6914-7
  • Type

    conf

  • DOI
    10.1109/ICMTS.2010.5466855
  • Filename
    5466855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2386227