AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits

Author

Fernandez, R. ; Kaczer, B. ; Nackaerts, A. ; Demuynck, S. ; Rodriguez, R. ; Nafria, M. ; Groeseneken, G.

Author_Institution

IMEC, Leuven

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

We describe on-chip circuits specially designed and fabricated for the purpose of measuring the effect of AC NBTI on an individual, well-defined device in the wide frequency range on a single wafer. The circuits are designed to allow measurements in multiple modes, specifically, DC and AC NBTI (both interrupted and on-the-fly), on a single pFET and on a CMOS inverter, as well as charge-pumping characterization of the stressed pFET. The results indicate that AC NBTI is independent of the frequency in the 1 Hz-2 GHz range. The voltage and stress time acceleration is observed to be identical for both AC and DC NBTI stress

Keywords

CMOS integrated circuits; field effect transistors; integrated circuit design; integrated circuit measurement; integrated circuit reliability; 1 to 2E9 Hz; AC NBTI; CMOS inverter; NBTI stress; charge-pumping characterization; dedicated on-chip CMOS circuits; field effect transistor; negative bias temperature instability; stress time acceleration; stressed pFET; Acceleration; Charge pumps; Circuits; Current measurement; Frequency measurement; Inverters; Niobium compounds; Stress measurement; Titanium compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346777

Filename

4154196