Plasma Co-polymerization Technology with Molecular-level Structure Tightening in "In-situ" SiOCH Stacks for 32nm-node Cu Interconnects

Author

Tada, M. ; Yamamoto, H. ; Ito, F. ; Narihiro, M. ; Ueki, M. ; Inoue, N. ; Abe, M. ; Saito, S. ; Takeuchi, T. ; Furutake, N. ; Onodera, T. ; Kawahara, J. ; Arai, K. ; Kasama, Y. ; Taiji, T. ; Tohara, M. ; Sekine, M. ; Hayashi, Y.

Author_Institution

Syst. Devices Res. Labs., NEC Corp., Kanagawa

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

A novel plasma co-polymerization technology, using flexibly-mixed molecular gas of chain-type vinyl-siloxane and 6-membered ring-type one, has been developed for new seamless low-k SiOCH stacks (SEALS). An ultimate high-modulus silica-amorphous-carbon-composite(SACC)-SiOCH film with 24.8GPa was realized by 100%-injection of the chain-type siloxane, adapting to the hard-mask on molecular-pore-stack (MPS) SiOCH film (k=2.45, 3.0GPa) from 100%-injection of the ring-type siloxane. For the via-dielectrics was utilized a new co-polymerized (CP) SiOCH film (k=2.8, 12.6GPa) from these gas mixture to enhance the mechanical strength. The in-situ sequential deposition of three kinds of films without air-break accomplished excellent adhesion, high quality interface and low O₂ ashing damage. The fully-scaled-down, 32nm-node Cu interconnects achieved 83fF/mm (single-load) in 100nm-pitched Cu lines with the new co-polymerized SEALS

Keywords

copper; integrated circuit interconnections; polymerisation; semiconductor technology; silicon compounds; sputter etching; 12.6 GPa; 3.0 GPa; 32 nm; Cu; SACC; SiO₂; SiOCH; hard-mask; in-situ sequential deposition; mixed molecular gas; molecular-level structure tightening; molecular-pore-stack; plasma co-polymerization technology; seamless low-k stacks; silica-amorphous-carbon-composite film; via-dielectrics; vinyl-siloxane; Adhesive strength; Chemicals; Etching; Leakage current; National electric code; Plasma applications; Plasma chemistry; Polymer films; Seals; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346781

Filename

4154200