DC-stress-induced Degradation of Analog Characteristics in HfxAl(1-x)O MIM Capacitors

Author

Takeda, Kenichi ; Yamada, Renichi ; Imai, Toshinori ; Fujiwara, Tuyoshi ; Hashimoto, Takashi ; Ando, Toshio

Author_Institution

Central Res. Lab., Hitachi, Ltd., Tokyo

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

Time-dependent capacitance-density (CD) increase and linearity degradations of HfAlO-MIM capacitors by constant voltage stress were demonstrated for the first time. It was found that extrapolated CD increase after 10 years strongly depends on Al concentration in HfAlO dielectric. Accordingly, Al concentration of more than 14 at.% is required to keep CD increase below 1%. It was also found that the CD increase and linearity degradations (temperature and frequency) originate from the dielectric-loss increase and that the relationships between these parameters quantitatively agree with Gevers´ model

Keywords

MIM devices; aluminium compounds; capacitance; dielectric materials; hafnium compounds; reliability; thin film capacitors; DC-stress-induced degradation; Gever model; HfAlO; MIM capacitors; analog characteristics; constant voltage stress; dielectric-loss increase; linearity degradations; time-dependent capacitance-density increase; Capacitance; Degradation; Dielectrics; Hafnium oxide; Leakage current; Linearity; MIM capacitors; Stress; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346783

Filename

4154202