Title :
DC-stress-induced Degradation of Analog Characteristics in HfxAl(1-x)O MIM Capacitors
Author :
Takeda, Kenichi ; Yamada, Renichi ; Imai, Toshinori ; Fujiwara, Tuyoshi ; Hashimoto, Takashi ; Ando, Toshio
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Tokyo
Abstract :
Time-dependent capacitance-density (CD) increase and linearity degradations of HfAlO-MIM capacitors by constant voltage stress were demonstrated for the first time. It was found that extrapolated CD increase after 10 years strongly depends on Al concentration in HfAlO dielectric. Accordingly, Al concentration of more than 14 at.% is required to keep CD increase below 1%. It was also found that the CD increase and linearity degradations (temperature and frequency) originate from the dielectric-loss increase and that the relationships between these parameters quantitatively agree with Gevers´ model
Keywords :
MIM devices; aluminium compounds; capacitance; dielectric materials; hafnium compounds; reliability; thin film capacitors; DC-stress-induced degradation; Gever model; HfAlO; MIM capacitors; analog characteristics; constant voltage stress; dielectric-loss increase; linearity degradations; time-dependent capacitance-density increase; Capacitance; Degradation; Dielectrics; Hafnium oxide; Leakage current; Linearity; MIM capacitors; Stress; Tin; Voltage;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346783
