Structural Evolution in LSI Devices Reducing Parasitic Effects toward RF/ubiquitous Applications

Due to on-going technology paradigm shift from large-integrity LSI to smart LSI with RF/ubiquitous functions, reductions of "parasitic effects" become main concerns to accomplish low-power and high-quality RF operations with the limited interconnect resource. For the power saving, parasitic capacitance of the local interconnects, or the effective dielectric constant (k_eff), has to be reduced by low-k introduction. For the RF functions, MOSFETs with high fmax, compact-sized passive components such as 3D inductors and high-k MIM capacitors are needed. Structural innovation and novel material introduction are key factors to minimize the "parasitic effects" for the smart integration with RF/ubiquitous functions