DocumentCode :
2386405
Title :
Pulsed measurement method for characterizing chemical solutions using nanowire field effect transistors
Author :
Mescher, Marleen ; Marcelis, Bout ; De Wild, Marco ; Klootwijk, Johan H.
Author_Institution :
Mater. Innovation Inst. M2i, Netherlands
fYear :
2010
fDate :
22-25 March 2010
Firstpage :
44
Lastpage :
47
Abstract :
This paper presents a method for characterizing chemical solutions using nanowire field effect transistors. A pulsed gate potential method is used to prevent instabilities related to the dynamics of ions and other charged species present in the solution. Applying this method realizes a significant increase of the stability of the drain current versus gate potential characteristics of the devices, enabling reproducible characterization of chemical solutions with nanowire field effect transistors in aqueous environments.
Keywords :
chemical sensors; elemental semiconductors; field effect transistors; nanowires; pulse measurement; silicon; Si; aqueous environments; charged species; chemical solutions; drain current; gate potential characteristics; ion dynamics; nanowire field effect transistors; pulsed gate potential method; pulsed measurement method; Chemical and biological sensors; Chemical engineering; Chemical sensors; Chemical technology; FETs; Nanobioscience; Nanoscale devices; Pulse measurements; Sensor phenomena and characterization; Threshold voltage; FET; Nanowire; fluidics; pulsed measurements; sensor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-6912-3
Electronic_ISBN :
978-1-4244-6914-7
Type :
conf
DOI :
10.1109/ICMTS.2010.5466863
Filename :
5466863
Link To Document :
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