3D integration by Cu-Cu thermo-compression bonding of extremely thinned bulk-Si die containing 10 μm pitch through-Si vias

Author

Swinnen, B. ; Ruythooren, W. ; De Moor, P. ; Bogaerts, L. ; Carbonell, L. ; De Munck, K. ; Eyckens, B. ; Stoukatch, S. ; Tezcan, D. Sabuncuoglu ; Tokei, Z. ; Vaes, J. ; Van Aelst, J. ; Beyne, E.

Author_Institution

IMEC, Leuven

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

Using standard single damascene type techniques on bulk-Si, combined on one hand with extreme wafer thinning and on the other with Cu-Cu thermo-compression bonding technology, the paper demonstrate yielding 10k through-wafer 3D-via chains with a via pitch of 10μm for a via diameter of 5μm. The bonded contacts exhibit shear strengths exceeding 40MPa. Measurements indicate there is no significant contact resistance at the Cu-Cu bonded interface: within measurement accuracy, the 4-point via chain resistance is consistent with bulk Cu resistivity

Keywords

integrated circuit interconnections; integrated circuit metallisation; lead bonding; 10 nm; 3D integration; 5 nm; Cu-Cu; Si; bonded contacts; contact resistance; extreme wafer thinning; pitch through via; single damascene type techniques; thermo-compression bonding; through-wafer 3D-via chains; Conductivity; Contact resistance; Density measurement; Dielectric substrates; Electrical resistance measurement; Etching; Integrated circuit layout; Temperature; Thickness measurement; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346786

Filename

4154205