Title :
Hot-wall batch-type CVD tool for high-k (Ba,Sr)TiO3 capacitors
Author :
Kiyotoshi, M. ; Yamazaki, S. ; Nakahira, J. ; Eguchi, K. ; Hieda, K. ; Yamamoto, H. ; Umehara, T. ; Hasebe, K. ; Asano, T. ; Nakao, K. ; Arikado, T. ; Okumura, K.
Author_Institution :
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
Abstract :
A hot-wall batch type BST-CVD tool with fast thermal processing (FTP) furnace and individual vaporizing liquid source supply system (ILSS) was developed for uniform deposition of BST. We also employed an in-situ multi-step (IMS) process that is sequential repetition of thin amorphous BST deposition and its crystallization in the same reactor to reconcile conformal BST deposition and good electrical performances. BST deposited by our hot-wall CVD shows slight substrate dependence (metal coated or not), therefore hotwall CVD is superior to a single slice tool for reduction of test wafer running. IMS deposited BST shows almost 100% step coverage, lower carbon impurity concentration than single step deposited BST and sufficient electrical characteristics (leakage current <10-7 A/cm2, Teq<0.5 nm) for both SRO and Ru electrodes.
Keywords :
barium compounds; capacitors; carbon; chemical vapour deposition; dielectric thin films; impurity distribution; leakage currents; rapid thermal processing; strontium compounds; 0.5 nm; BST; BaSrTiO3:C; Ru; Ru electrodes; SRO electrodes; amorphous BST deposition; carbon impurity concentration; crystallization; electrical characteristics; electrical performance; fast thermal processing; high-k (Ba,Sr)TiO3 capacitors; hot-wall batch-type CVD tool; in-situ multi-step process; leakage current; step coverage; substrate dependence; uniform deposition; vaporizing liquid source supply system; Amorphous materials; Binary search trees; Crystallization; Electric variables; Furnaces; High K dielectric materials; High-K gate dielectrics; Impurities; Inductors; Testing;
Conference_Titel :
Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
Print_ISBN :
0-7803-7392-8
DOI :
10.1109/ISSM.2000.993628