DocumentCode :
2386441
Title :
In-situ gas cleaning technology of hot-wall batch-type reactor for (Ba,Sr)TiO3
Author :
Yamamoto, H. ; Spaull, P. ; Nishimura, K. ; Hasebe, K. ; Asano, T. ; Nakao, K. ; Kiyotoshi, M. ; Eguchi, K. ; Arikado, T. ; Okumura, K.
Author_Institution :
Eng. & Product Dev. Dept., Tokyo Electron Tohoku Ltd., Kanagawa, Japan
fYear :
2000
fDate :
2000
Firstpage :
114
Lastpage :
117
Abstract :
We present a novel approach to gas cleaning technology for BaxSr(1-x)TiO2 (BST) residual coating in hot wall CVD reactors. It consists of two step continuous process. In the first step we use Cl2 gas at 800 deg. C to remove Ba and Sr which have low vapor pressure. Second step consists of using ClF3 gas to remove Ti at relatively low temperature. Vapor pressures of the chlorine compounds of Ba and Sr are considerably higher than those of their other existing compounds, thus by chlorination, Ba and Sr turn volatile and are easily etched off.
Keywords :
barium compounds; chemical vapour deposition; dielectric thin films; etching; strontium compounds; surface cleaning; vapour pressure; (Ba,Sr)TiO3; 800 C; BST; BaSrTiO3; Cl2 gas; ClF3 gas; chlorination; etching; hot wall CVD reactors; hot-wall batch-type reactor; in-situ gas cleaning technology; low vapor pressure; residual coating; two step continuous process; vapor pressures; Binary search trees; Capacitors; Cleaning; Electrons; Etching; Gases; Inductors; Plasma temperature; Product development; Strontium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
ISSN :
1523-553X
Print_ISBN :
0-7803-7392-8
Type :
conf
DOI :
10.1109/ISSM.2000.993629
Filename :
993629
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2386441
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