• DocumentCode
    2386441
  • Title

    In-situ gas cleaning technology of hot-wall batch-type reactor for (Ba,Sr)TiO3

  • Author

    Yamamoto, H. ; Spaull, P. ; Nishimura, K. ; Hasebe, K. ; Asano, T. ; Nakao, K. ; Kiyotoshi, M. ; Eguchi, K. ; Arikado, T. ; Okumura, K.

  • Author_Institution
    Eng. & Product Dev. Dept., Tokyo Electron Tohoku Ltd., Kanagawa, Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    114
  • Lastpage
    117
  • Abstract
    We present a novel approach to gas cleaning technology for BaxSr(1-x)TiO2 (BST) residual coating in hot wall CVD reactors. It consists of two step continuous process. In the first step we use Cl2 gas at 800 deg. C to remove Ba and Sr which have low vapor pressure. Second step consists of using ClF3 gas to remove Ti at relatively low temperature. Vapor pressures of the chlorine compounds of Ba and Sr are considerably higher than those of their other existing compounds, thus by chlorination, Ba and Sr turn volatile and are easily etched off.
  • Keywords
    barium compounds; chemical vapour deposition; dielectric thin films; etching; strontium compounds; surface cleaning; vapour pressure; (Ba,Sr)TiO3; 800 C; BST; BaSrTiO3; Cl2 gas; ClF3 gas; chlorination; etching; hot wall CVD reactors; hot-wall batch-type reactor; in-situ gas cleaning technology; low vapor pressure; residual coating; two step continuous process; vapor pressures; Binary search trees; Capacitors; Cleaning; Electrons; Etching; Gases; Inductors; Plasma temperature; Product development; Strontium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-7392-8
  • Type

    conf

  • DOI
    10.1109/ISSM.2000.993629
  • Filename
    993629
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2386441