Suitability of FinFET technology for low-power mixed-signal applications

Author

Parvais, B. ; Gustin, C. ; De Heyn, V. ; Loo, J. ; Dehan, M. ; Subramanian, Venkatachalam ; Mercha, A. ; Collaert, N. ; Rooyackers, R. ; Jurczak, M. ; Wambacq, P. ; Decoutere, S.

Author_Institution

IMEC, Leuven

fYear

0

fDate

0-0 0

Firstpage

1

Lastpage

4

Abstract

Wireless applications require a low power technology that enables digital/analog/RF functions on the same chip. FinFET technology presents a competitive alternative to planar CMOS as it features good digital, analog and low-frequency noise performances. Also, very good matching performance is presented here for the first time. Moreover, FinFETs are shown to be attractive for low-power applications below 10 GHz. The suitability of Fin varactors is evaluated and tradeoffs are given. An inductorless oscillator with large tuning range (1-8.5 GHz) for low-power wideband applications is demonstrated for the first time

Keywords

CMOS integrated circuits; MOS integrated circuits; UHF oscillators; low-power electronics; mixed analogue-digital integrated circuits; varactors; 1 to 8.5 GHz; Fin varactors; FinFET technology; digital/analog/RF functions; inductorless oscillator; low-power mixed-signal applications; planar CMOS; wireless applications; Annealing; CMOS technology; Dielectrics; FinFETs; Implants; Low-frequency noise; Oscillators; Radio frequency; Tin; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on

Conference_Location

Padova

Print_ISBN

1-4244-0097-X

Type

conf

DOI

10.1109/ICICDT.2006.220796

Filename

1669383