• DocumentCode
    2386449
  • Title

    Kelvin resistor structures for the investigation of corner serif Proximity Correction

  • Author

    Smith, S. ; Tsiamis, A. ; McCallum, M. ; Hourd, A.C. ; Stevenson, J.T.M. ; Walton, A.J.

  • Author_Institution
    Inst. for Integrated Micro & Nano Syst., Univ. of Edinburgh, Edinburgh, UK
  • fYear
    2010
  • fDate
    22-25 March 2010
  • Firstpage
    24
  • Lastpage
    29
  • Abstract
    Electrical test structures for the characterisation of Optical Proximity Correction (OPC) have been fabricated in thin aluminium using i-line lithography and reactive ion etching. Initial electrical measurements are presented which show an increase in the resistance of a right angled section of Al track as the level of OPC on the inside corner is increased. Structures with OPC applied to the outer corner do not show the same change in resistance. SEM images of similar Al test structures clearly show the effects of applying OPC and suggest that inner corner serif OPC leads to a narrowing of the conducting track.
  • Keywords
    proximity effect (lithography); scanning electron microscopy; semiconductor device testing; sputter etching; Al test structures; Kelvin resistor structures; OPC; SEM images; corner serif proximity correction; electrical measurements; electrical test structures; i-line lithography; optical proximity correction; reactive ion etching; Aluminum; Electric resistance; Electric variables measurement; Electrical resistance measurement; Etching; Kelvin; Lithography; Particle beam optics; Resistors; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
  • Conference_Location
    Hiroshima
  • Print_ISBN
    978-1-4244-6912-3
  • Electronic_ISBN
    978-1-4244-6914-7
  • Type

    conf

  • DOI
    10.1109/ICMTS.2010.5466866
  • Filename
    5466866