Title :
Kelvin resistor structures for the investigation of corner serif Proximity Correction
Author :
Smith, S. ; Tsiamis, A. ; McCallum, M. ; Hourd, A.C. ; Stevenson, J.T.M. ; Walton, A.J.
Author_Institution :
Inst. for Integrated Micro & Nano Syst., Univ. of Edinburgh, Edinburgh, UK
Abstract :
Electrical test structures for the characterisation of Optical Proximity Correction (OPC) have been fabricated in thin aluminium using i-line lithography and reactive ion etching. Initial electrical measurements are presented which show an increase in the resistance of a right angled section of Al track as the level of OPC on the inside corner is increased. Structures with OPC applied to the outer corner do not show the same change in resistance. SEM images of similar Al test structures clearly show the effects of applying OPC and suggest that inner corner serif OPC leads to a narrowing of the conducting track.
Keywords :
proximity effect (lithography); scanning electron microscopy; semiconductor device testing; sputter etching; Al test structures; Kelvin resistor structures; OPC; SEM images; corner serif proximity correction; electrical measurements; electrical test structures; i-line lithography; optical proximity correction; reactive ion etching; Aluminum; Electric resistance; Electric variables measurement; Electrical resistance measurement; Etching; Kelvin; Lithography; Particle beam optics; Resistors; Testing;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-6912-3
Electronic_ISBN :
978-1-4244-6914-7
DOI :
10.1109/ICMTS.2010.5466866