DocumentCode
2386449
Title
Kelvin resistor structures for the investigation of corner serif Proximity Correction
Author
Smith, S. ; Tsiamis, A. ; McCallum, M. ; Hourd, A.C. ; Stevenson, J.T.M. ; Walton, A.J.
Author_Institution
Inst. for Integrated Micro & Nano Syst., Univ. of Edinburgh, Edinburgh, UK
fYear
2010
fDate
22-25 March 2010
Firstpage
24
Lastpage
29
Abstract
Electrical test structures for the characterisation of Optical Proximity Correction (OPC) have been fabricated in thin aluminium using i-line lithography and reactive ion etching. Initial electrical measurements are presented which show an increase in the resistance of a right angled section of Al track as the level of OPC on the inside corner is increased. Structures with OPC applied to the outer corner do not show the same change in resistance. SEM images of similar Al test structures clearly show the effects of applying OPC and suggest that inner corner serif OPC leads to a narrowing of the conducting track.
Keywords
proximity effect (lithography); scanning electron microscopy; semiconductor device testing; sputter etching; Al test structures; Kelvin resistor structures; OPC; SEM images; corner serif proximity correction; electrical measurements; electrical test structures; i-line lithography; optical proximity correction; reactive ion etching; Aluminum; Electric resistance; Electric variables measurement; Electrical resistance measurement; Etching; Kelvin; Lithography; Particle beam optics; Resistors; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
Conference_Location
Hiroshima
Print_ISBN
978-1-4244-6912-3
Electronic_ISBN
978-1-4244-6914-7
Type
conf
DOI
10.1109/ICMTS.2010.5466866
Filename
5466866
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