Analysis of Dopant Diffusion and Defect Evolution during sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

Author

Noda, T. ; Vandervorst, W. ; Felch, S. ; Parihar, V. ; Vrancken, C. ; Severi, S. ; Falepin, A. ; Janssens, T. ; Bender, H. ; van Daele, B. ; Eyben, P. ; Niwa, M. ; Schreutelkamp, R. ; Nouri, F. ; Absil, P.P. ; Jurczak, M. ; De Meyer, K. ; Biesemans, S.

Author_Institution

Matsushita Electr. Ind. Co. Ltd, Leuven

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

Sub-millisecond (ms) non-melt laser annealing (NLA) is investigated through experiments and atomistic KMC modeling. NLA can improve the dopant activation dramatically and achieve shallow junctions. B diffusivity during sub-ms annealing is discussed for the first time. The KMC model with F_nV_m complexes indicates that the thermal budget of sub-ms annealing is too small for full defect evolution and one possible solution for defect stabilization is F co-implant

Keywords

Monte Carlo methods; diffusion; laser beam annealing; semiconductor doping; B diffusivity; F co-implant; atomistic kinetic Monte Carlo; defect evolution; dopant activation improvement; dopant diffusion; nonmelt laser annealing; Annealing; Atom lasers; Atomic beams; Atomic layer deposition; Boron; Kinetic theory; Laser modes; Monte Carlo methods; Semiconductor process modeling; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346789

Filename

4154208