Title :
Design and Optimization of nanoCMOS devices using predictive atomistic physics-based process modeling
Author :
Colombeau, B. ; Mok, K.R.C. ; Yeong, S.H. ; Benistant, F. ; Indajang, B. ; Tan, O. ; Yang, B. ; Li, Y. ; Jaraiz, M. ; Cowern, N.E.B. ; Chu, S.
Author_Institution :
Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, Street 2, Singapore 738406. Tel: +65 6360.4504, fax +65 6362.2945, email: bcolombeau@charteredsemi.com
Abstract :
For the first time, this work shows that the design and optimization of nanoCMOS devices can be achieved from atomistic physics-based process modeling. Remarkable prediction of device characteristics can be obtained even for novel co-implant processes. This extends the strength of TCAD in manufacturing for future generations of nanoCMOS devices.
Keywords :
Boron; CMOS technology; Design optimization; Electronics industry; Manufacturing industries; Nanoscale devices; Predictive models; Pulp manufacturing; Semiconductor device manufacture; Simulated annealing;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346790
