• DocumentCode
    2386531
  • Title

    Assessment of Process-Induced Damage in High- κ Transistors

  • Author

    Young, C.D. ; Choi, R. ; Dawei Heh ; Neugroschel, A. ; Hokyung Park ; Chang Yong Kang ; Brown, G.A. ; Seung Chul Song ; Byoung Hun Lee ; Bersuker, G.

  • Author_Institution
    SEMATECH, Austin, TX
  • fYear
    2006
  • fDate
    1-4 May 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Using a combination of electrical characterization techniques, one can separate contributions from generated and pre-existing electron traps inherent to high-k dielectrics, as well as identify process-induced effects in the device characteristics
  • Keywords
    electron traps; high-k dielectric thin films; impurity states; electrical characterization techniques; electron traps; high-k dielectrics; high-k transistors; process-induced damage; Capacitance-voltage characteristics; Data mining; Dielectric substrates; Electron mobility; Electron traps; High K dielectric materials; High-K gate dielectrics; Pulse measurements; Semiconductor films; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
  • Conference_Location
    Padova
  • Print_ISBN
    1-4244-0097-X
  • Type

    conf

  • DOI
    10.1109/ICICDT.2006.220802
  • Filename
    1669389
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2386531