Title :
Comprehensive Simulation of Program, Erase and Retention in Charge Trapping Flash Memories
Author :
Paul, Abhijeet ; Sridhar, Ch. ; Gedam, Suny ; Mahapatra, S.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Bombay
Abstract :
A simulator is developed for SONOS flash memories to predict program (P), erase (E) and retention (R) behavior under uniform ID operation. It provides insight on the impact of trap parameters on P, E and R and can be used to optimize memory stacks
Keywords :
flash memories; logic simulation; optimisation; SONOS flash memories; charge trapping flash memories; erase simulation; program simulation; retention simulation; simulator; Charge carrier processes; Effective mass; Electron traps; Energy capture; Fabrication; Flash memory; Predictive models; SONOS devices; Scalability; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346793
