Title :
Charging Damage and Product Impact in a Bulk CMOS Technology
Author :
Hook, Terence B. ; Musante, Charles ; Harmon, David ; Sullivan, Timothy
Author_Institution :
IBM Microelectron., Essex Junction, VT
Abstract :
In this paper, we tabulate the characteristics of antennas in several real designs in a 180-nm technology, and show data indicating that the product is not as susceptible to charging damage as the test structures used to control the process line. The experiment consisted of evaluating a large (500 pieces) sample of parts with considerable process-induced antenna damage - and yet no measurable degradation in product performance, yield, or reliability was found
Keywords :
antenna testing; nanotechnology; reliability; 180 nm; antenna characteristics; bulk CMOS technology; charging damage; nanotechnology; process line control; process-induced antenna damage; product impact; reliability; CMOS technology; Degradation; Diodes; Frequency; Hot carriers; Microelectronics; Process control; Testing; Threshold voltage; Wiring;
Conference_Titel :
Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
Conference_Location :
Padova
Print_ISBN :
1-4244-0097-X
DOI :
10.1109/ICICDT.2006.220805
