Title :
Physics-based analytical model of chalcogenide-based memories for array simulation
Author :
Ielmini, Daniele ; Zhang, Yuegang
Author_Institution :
DEI, Politecnico di Milano
Abstract :
The conduction mechanisms in chalcogenide materials for phase-change memory (PCM) applications are studied. A trap-limited transport model for sub-threshold conduction in the amorphous chalcogenide is presented, and extended to threshold switching in the amorphous phase and transport in the highly-conductive crystalline phase, providing a fully-comprehensive, analytical model for PCMs. Finally, a PCM self-rectifying cross-point device is studied with the aid of the model, allowing to evaluate the array performance for different temperatures, read scheme and array size
Keywords :
amorphous semiconductors; chalcogenide glasses; integrated circuit modelling; phase change materials; random-access storage; amorphous chalcogenide; array simulation; chalcogenide materials; chalcogenide-based memories; conduction mechanisms; highly-conductive crystalline phase; phase-change memory; physics-based analytical model; self-rectifying cross-point device; subthreshold conduction; threshold switching; trap-limited transport model; Amorphous materials; Analytical models; Conducting materials; Crystalline materials; Crystallization; Electron traps; Phase change materials; Phase change memory; Temperature measurement; Voltage;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346795
