DocumentCode :
2386635
Title :
Quantum, Power, and Compound Semiconductor Devices - GaN Technology, Processes, Reliability and Circuit Applications
fYear :
2006
fDate :
11-13 Dec. 2006
Firstpage :
1
Lastpage :
1
Keywords :
Circuits; Electron traps; Gallium nitride; HEMTs; MMICs; MODFETs; Paper technology; Pulse amplifiers; Semiconductor device reliability; Semiconductor devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Type :
conf
DOI :
10.1109/IEDM.2006.346796
Filename :
4154215
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2386635
