• DocumentCode
    2386639
  • Title

    The effective method of reducing slurry for interlayer dielectric CMP

  • Author

    Ishimoto, Kohichi

  • Author_Institution
    Semicond. Operations, IBM Japan Ltd, Shiga, Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    153
  • Lastpage
    156
  • Abstract
    Recently chemical mechanical polishing (CMP) became a routine process in semiconductor manufacturing process. However one problem is that the slurry consumption in CMP process is very large. Some experiments are aimed at reducing slurry consumption. Our research showed that the slurry was needed only at the start of polishing in ILD CMP and that we could planarize without slurry after the midpoint of polishing. This paper describes a method of reducing slurry for interlayer dielectric CMP and we predict that the application of this method to our ILD CMP process could reduce waste slurry by about 50%
  • Keywords
    chemical mechanical polishing; ILD CMP; chemical mechanical polishing; interlayer dielectric CMP; planarization; semiconductor manufacturing process; slurry consumption; slurry reduction; Chemical processes; Costs; Detectors; Dielectrics; Manufacturing processes; Planarization; Rough surfaces; Slurries; Surface roughness; Vibrations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
  • Conference_Location
    Tokyo
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-7392-8
  • Type

    conf

  • DOI
    10.1109/ISSM.2000.993637
  • Filename
    993637