DocumentCode
2386639
Title
The effective method of reducing slurry for interlayer dielectric CMP
Author
Ishimoto, Kohichi
Author_Institution
Semicond. Operations, IBM Japan Ltd, Shiga, Japan
fYear
2000
fDate
2000
Firstpage
153
Lastpage
156
Abstract
Recently chemical mechanical polishing (CMP) became a routine process in semiconductor manufacturing process. However one problem is that the slurry consumption in CMP process is very large. Some experiments are aimed at reducing slurry consumption. Our research showed that the slurry was needed only at the start of polishing in ILD CMP and that we could planarize without slurry after the midpoint of polishing. This paper describes a method of reducing slurry for interlayer dielectric CMP and we predict that the application of this method to our ILD CMP process could reduce waste slurry by about 50%
Keywords
chemical mechanical polishing; ILD CMP; chemical mechanical polishing; interlayer dielectric CMP; planarization; semiconductor manufacturing process; slurry consumption; slurry reduction; Chemical processes; Costs; Detectors; Dielectrics; Manufacturing processes; Planarization; Rough surfaces; Slurries; Surface roughness; Vibrations;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
0-7803-7392-8
Type
conf
DOI
10.1109/ISSM.2000.993637
Filename
993637
Link To Document