Title :
Reliability of Ultra Thin Gate Oxide CMOS Devices: Design Perspective
Author :
Parthasarathy, C.R. ; Denais, M. ; Huard, V. ; Ribes, G. ; Vincent, E. ; Bravaix, A.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
Assessment of design implications due to degradation of CMOS devices is increasingly required in the latest technologies. This paper discusses degradation due to channel hot carriers, NBTI and oxide breakdown from a design perspective - in terms of characterization, mechanisms and circuit analysis - introducing assessment of multiple degradation modes on same device
Keywords :
hot carriers; integrated circuit design; integrated circuit reliability; semiconductor device breakdown; semiconductor device reliability; CMOS devices design; CMOS devices reliability; circuit analysis; hot carriers; oxide breakdown; CMOS technology; Circuit analysis; Degradation; Electric breakdown; Hot carriers; MOSFET circuits; Niobium compounds; Stress; Temperature; Titanium compounds;
Conference_Titel :
Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
Conference_Location :
Padova
Print_ISBN :
1-4244-0097-X
DOI :
10.1109/ICICDT.2006.220808
