DocumentCode
2386647
Title
Reliability of Ultra Thin Gate Oxide CMOS Devices: Design Perspective
Author
Parthasarathy, C.R. ; Denais, M. ; Huard, V. ; Ribes, G. ; Vincent, E. ; Bravaix, A.
Author_Institution
STMicroelectronics, Crolles
fYear
0
fDate
0-0 0
Firstpage
1
Lastpage
8
Abstract
Assessment of design implications due to degradation of CMOS devices is increasingly required in the latest technologies. This paper discusses degradation due to channel hot carriers, NBTI and oxide breakdown from a design perspective - in terms of characterization, mechanisms and circuit analysis - introducing assessment of multiple degradation modes on same device
Keywords
hot carriers; integrated circuit design; integrated circuit reliability; semiconductor device breakdown; semiconductor device reliability; CMOS devices design; CMOS devices reliability; circuit analysis; hot carriers; oxide breakdown; CMOS technology; Circuit analysis; Degradation; Electric breakdown; Hot carriers; MOSFET circuits; Niobium compounds; Stress; Temperature; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
Conference_Location
Padova
Print_ISBN
1-4244-0097-X
Type
conf
DOI
10.1109/ICICDT.2006.220808
Filename
1669395
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