Title :
Processes and Device Technologies for AlGaN/GaN High Electron Mobility Transistors
Author :
Adesida, I. ; Kumar, V. ; Mohammed, F. ; Wang, L. ; Basu, A. ; Kim, D.-H. ; Lanford, W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana-Champaign, IL
Abstract :
The AlInGaN-based high electron mobility transistor (HEMT) has proven to be the leading candidate for simultaneously realizing ultra-high frequency and ultra-high power amplifiers. The potential for these devices extends into operation in the mm-wave regime. Processes and device technologies that have resulted in these tremendous improvements are addressed
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; high electron mobility transistors; mm-wave regime; ultra-high frequency amplifiers; ultra-high power amplifiers; Aluminum gallium nitride; Electrons; Frequency; Gallium nitride; Gold; HEMTs; MODFETs; Metallization; Microwave devices; Ohmic contacts;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346797
