Author :
Mathew, L. ; Sadd, M. ; Kalpat, S. ; Zavala, M. ; Stephens, T. ; Mora, R. ; Rai, R. ; Parker, C. ; Vasek, J. ; Sing, D. ; Shinier, R. ; Prabhu, L. ; Workman, G.O. ; Ablen, G. ; Shi, Z. ; Saenz, J. ; Min, B. ; Burnett, David ; Nguyen, B.Y. ; Mogab, J. ; Ch
Abstract :
The ITFET is novel device architecture; it offers significant advantages over planar and FinFET technologies. The ITFET uses traditional CMOS processing technologies and can be rapidly inserted into existing SOI process flows. Doped channel ITFET devices have been demonstrated future work will include undoped channel ITFET devices. Simulated performances of the ITFET devices predict these devices can meet the 45nm and 32nm device performance. This transistor architecture offers device, process and application advantages
Keywords :
field effect transistors; semiconductor device models; 32 nm; 45 nm; CMOS processing technologies; FinFET technologies; SOI process flows; circuits based ITFET; device architecture; inverted T channel FET; planar technologies; transistor architecture; CMOS technology; Doping; FETs; Fabrication; FinFETs; Immune system; MOSFET circuits; Manufacturing; Oxidation; Silicon;
