Title :
Characterization of HfSiON Gate Dielectric with TiN Gate on Multi-Gate MOSFET
Author :
Xiong, Weize ; Young, Chadwin ; Matthew, Kenneth ; Rinn Cleavelin, C. ; Schulz, Thomas ; Schruefer, Klaus ; Patruno, Paul
Author_Institution :
Texas Instrum. Inc., Dallas, TX
Abstract :
The hysteresis and mobilities of 1nm EOT HfSiON dielectric on multi-gate MOSFET (MuGFET) with TiN metal gate were studied. We did not observe any drain current hysteresis. This is consistent with the same gate stack on planar bulk MOSFET. However, we found significant electron and hole mobility degradation for MuGFET compared to SiO2 control devices (up to -25%). The percentage of degradation is higher than the same gate stack on planar bulk MOSFET, which points to the poor interfacial oxide quality on the MuGFET fin sidewalls
Keywords :
MOSFET; dielectric hysteresis; electron mobility; hafnium compounds; hole mobility; oxygen compounds; silicon compounds; titanium compounds; 1 nm; EOT dielectric; HfSiON; MuGFET; SiO2; TiN; drain current hysteresis; electron mobility; gate dielectric; hole mobility; multigate MOSFET; Annealing; CMOS technology; Degradation; Dielectrics; Hysteresis; Implants; MOS devices; MOSFET circuits; Silicon; Tin;
Conference_Titel :
Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
Conference_Location :
Padova
Print_ISBN :
1-4244-0097-X
DOI :
10.1109/ICICDT.2006.220810
