DocumentCode
2386702
Title
An Internally-matched GaN HEMT Amplifier with 550-watt Peak Power at 3.5 GHz
Author
Wu, Y.F. ; Wood, S.M. ; Smith, R.P. ; Sheppard, S. ; Allen, S.T. ; Parikh, P. ; Milligan, J.
Author_Institution
Cree Santa Barbara Technol. Center, Goleta, CA
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
3
Abstract
A high-power amplifier using two 28.8-mm-periphery GaN HEMTs was demonstrated with all matching components inside the package. When biased at 55 V, a power bandwidth of 3.3-3.6 GHz was obtained, with 550-Wpeak output, 12.5-dB associated gain and 66% drain efficiency at 3.45 GHz
Keywords
HEMT circuits; III-V semiconductors; gallium compounds; microwave power amplifiers; wide band gap semiconductors; 12.5 dB; 3.3 to 3.6 GHz; 3.45 GHz; 3.5 GHz; 55 V; 550 W; GaN; high-power amplifier; internally-matched HEMT amplifier; Frequency; Gain; Gallium nitride; HEMTs; Impedance; Packaging; Power amplifiers; Power generation; Pulse amplifiers; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0439-8
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346800
Filename
4154219
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