Title :
GaN HFET for W-band Power Applications
Author :
Micovic, M. ; Kurdoghlian, A. ; Hashimoto, P. ; Hu, M. ; Antcliffe, M. ; Willadsen, P.J. ; Wong, W.-S. ; Bowen, R. ; Milosavljevic, I. ; Schmitz, A. ; Wetzel, M. ; Chow, D.H.
Author_Institution :
HRL Labs. LLC, Malibu, CA
Abstract :
In this paper we report high frequency GaN power device and measured power performance of the first W-band (75 GHz-110 GHz) MMIC fabricated in GaN material system. The first W-band GaN MMIC with 150 mum of output gate periphery produces 316 mW of continuous wave output power (power density =2.1 W/m) at a frequency of 80.5 GHz and has associated power gain of 17.5 dB. By comparison the reported state of the art for other solid state technologies in W-band is 427 mW measured in a pulsed mode on an InP HEMT MMIC with 1600 mum of output periphery (power density = 0.26 W/mm). The reported result demonstrates tremendous superiority of GaN device technology for power applications at frequencies greater than 75 GHz
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; high electron mobility transistors; wide band gap semiconductors; 17.5 dB; 316 mW; 75 to 110 GHz; 80.5 GHz; GaN; GaN HFET; W-band GaN MMIC; W-band power applications; high frequency GaN power device; Frequency measurement; Gain; Gallium nitride; HEMTs; MMICs; MODFETs; Power generation; Power measurement; Pulse measurements; Solid state circuits;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346802
