Carbon Nanotubes: From Growth, Placement and Assembly Control to 60mV/decade and Sub-60 mV/decade Tunnel Transistors

This paper presents recent progress on placement and orientation control of single-walled carbon nanotubes (SWNTs) by both CVD and PECVD growth in electric fields and on single crystal quartz substrates, and post-growth Langmuir Bloddget assembly of close-packed SWNTs. We also present fabrication of nanotube field effect-transistors (FETs) including MOSFET like devices with 60mV/decade switching and ambipolar P-I-N band-to-band tunnel (BTBT) transistors with subthreshold swings down to 25mV/decade