Title :
Carbon Nanotubes: From Growth, Placement and Assembly Control to 60mV/decade and Sub-60 mV/decade Tunnel Transistors
Author :
Zhang, Guangyu ; Wang, Xinran ; Li, Xiaolin ; Lu, Yuerui ; Javey, Ali ; Dai, Hongjie
Author_Institution :
Dept. of Chem. & Lab. for Adv. Mater., Stanford Univ., CA
Abstract :
This paper presents recent progress on placement and orientation control of single-walled carbon nanotubes (SWNTs) by both CVD and PECVD growth in electric fields and on single crystal quartz substrates, and post-growth Langmuir Bloddget assembly of close-packed SWNTs. We also present fabrication of nanotube field effect-transistors (FETs) including MOSFET like devices with 60mV/decade switching and ambipolar P-I-N band-to-band tunnel (BTBT) transistors with subthreshold swings down to 25mV/decade
Keywords :
carbon nanotubes; plasma CVD coatings; tunnel transistors; PECVD growth; band-to-band tunnel transistors; nanotube field effect-transistors; single-walled carbon nanotubes; Assembly; Carbon nanotubes; Chemical vapor deposition; FETs; Iron; MOSFETs; Organic materials; Position control; Semiconductivity; Substrates;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346804
