Mobility-Enhanced CMOS Technologies Using Strained Si/SiGe/Ge Channels

Author

Takagi, Takagi ; Tezuka, T. ; Irisawa, T. ; Nakaharai, S. ; Numata, T. ; Usuda, K. ; Maeda, T. ; Sugiyama, N.

Author_Institution

MIRAI-AIST, Kawasaki

fYear

0

fDate

0-0 0

Firstpage

1

Lastpage

2

Abstract

It has been well recognized that continuous increase in drive current is mandatory for successive growth of future CMOS LSIs. This means that the mobility enhancement has to keep being pursued in each technology node. For this purpose, a variety of local strain and global strain techniques have recently been developed and some of them have already been implemented in real products as presented in T. Ghani et al. (2003). This paper reports our recent approaches on the development of mobility-enhanced device structures based on the global strain substrates

Keywords

CMOS integrated circuits; Ge-Si alloys; germanium; hole mobility; large scale integration; nanotechnology; silicon; substrates; CMOS LSI; Si-SiGe-Ge; global strain substrates; global strain technique; local strain technique; mobility enhancement; strained channels; CMOS technology; Capacitive sensors; Compressive stress; Electron mobility; Fabrication; Germanium silicon alloys; MOSFET circuits; Silicon germanium; Silicon on insulator technology; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on

Conference_Location

Padova

Print_ISBN

1-4244-0097-X

Type

conf

DOI

10.1109/ICICDT.2006.220817

Filename

1669404