Title :
The short-loop process tuning & yield evaluation by using the addressable failure site test structures (AFS-TS)
Author :
Doong, Kelvin Yih-Yuh ; Hsieh, Sunnys ; Lin, Sheng-Che ; Shen, Binson ; Hsu, Charles Ching-Hsiang
Author_Institution :
Worldwide Semicond. Manuf. Corp., Hsin-Chu, Taiwan
Abstract :
This work describes the implementation of a novel test structure called addressable failure site test structure (AFS-TS) for via process optimization including the liner layer and W-CVD filling process. It manifests the design, defect detection and yield analysis of addressable failure site test structures. The novel test structures are used to discriminate the yield loss issues based on the high spatial defect detection resolution within 2000×2200 μm2 of interconnect test structures. A test chip of 4.0×6.6 mm2 containing nine types of test structures was implemented using 0.25 μm logic backend of line process. This simple and efficient killer defect identification of process steps is employed as yield enhancement strategy
Keywords :
CVD coatings; failure analysis; integrated circuit design; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; integrated circuit yield; integrated logic circuits; tungsten; 0.25 micron; 2200 micron; 4.0 mm; 6.6 mm; AFS-TS; W; W-CVD filling process; addressable failure site test structures; defect detection; design; high spatial defect detection resolution; interconnect test structures; killer defect identification; liner layer; logic backend of line process; short-loop process tuning/yield evaluation; test chip; test structure; via process optimization; yield analysis; yield enhancement strategy; yield loss; Circuit testing; Integrated circuit interconnections; Integrated circuit testing; Logic testing; Monitoring; Parameter extraction; Process control; Semiconductor device manufacture; Semiconductor device testing; Vehicles;
Conference_Titel :
Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
0-7803-7392-8
DOI :
10.1109/ISSM.2000.993647