DocumentCode :
2386933
Title :
Electron Transport Properties of Ultrathin-body and Tri-gate SOI nMOSFETs with Biaxial and Uniaxial Strain
Author :
Irisawa, Toshifumi ; Numata, Toshinori ; Tezuka, Tsutomu ; Sugiyama, Naoharu ; Takagi, Shin-ichi
Author_Institution :
MIRAI-ASET, Kawasaki
fYear :
2006
fDate :
11-13 Dec. 2006
Firstpage :
1
Lastpage :
4
Abstract :
Electron transport properties in biaxially strained UTB MOSFETs and uniaxially strained tri-gate MOSFETs are experimentally investigated. It is found that the strain is still effective even in UTB regime and the mobility enhancement of 1.4 against control thick (20 nm) SOI is preserved in devices with TSoi = 2.4 nm. We also demonstrate 2.0x mobility enhancement in tri-gate nMOSFETs with uniaxial <110> tensile strain that is favored not only on (100) but also on (110) sidewall
Keywords :
MOSFET; electron transport theory; silicon-on-insulator; SOI nMOSFET; biaxial strain; electron transport properties; mobility enhancement; uniaxial strain; CMOS technology; Capacitive sensors; Degradation; Electrons; MOSFETs; Scattering; Silicon on insulator technology; Tensile strain; Thickness control; Uniaxial strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
Type :
conf
DOI :
10.1109/IEDM.2006.346811
Filename :
4154230
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2386933
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