Title :
Design and Fabrication of MOSFETs with a Reverse Embedded SiGe (Rev. e-SiGe) Structure
Author :
Donaton, Ricardo A. ; Chidambarrao, Dureseti ; Johnson, Jeff ; Chang, Paul ; Liu, Yaocheng ; Henson, W. Kirklen ; Holt, Judson ; Li, Xi ; Li, Jinghong ; Domenicucci, Anthony ; Madan, Anita ; Rim, Ken ; Wann, Clement
Author_Institution :
Semicond. R&D Center, IBM Syst. & Technol. Group, Hopewell Junction, NY
Abstract :
A novel device structure containing a SiGe stressor is used to impose tensile strain in nMOSFET channel. 400MPa of uniaxial tensile stress is induced in the Si channel through elastic relaxation/strain of the SiGe/Si bi-layer structure. This strain results in 40% mobility enhancement and 15% drive current improvement for sub-60nm devices compared to the control device with no strain
Keywords :
Ge-Si alloys; MOSFET; stress-strain relations; MOSFET; SiGe; elastic relaxation/strain; mobility enhancement; reverse embedded SiGe structure; tensile strain; uniaxial tensile stress; Capacitive sensors; Fabrication; Germanium silicon alloys; MOSFET circuits; Research and development; Silicon compounds; Silicon germanium; Tensile strain; Tensile stress; Uniaxial strain;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346813
