Strained Silicon-Germanium-on-Insulator N-MOSFETs Featuring Lattice Mismatched Source/Drain Stressor and High-Stress Silicon Nitride Liner

A novel strained-SiGe n-channel field-effect transistor (nFET) featuring silicon-carbon (Si_0.99C_0.01) source/drain (S/D) stressors and tensile stress nitride (SiN) liner is demonstrated for the first time. The silicon-carbon Si_1-yC _y, material is pseudomorphically grown by selective epitaxy and the carbon mole fraction y incorporated is 1%. Si_0.99C _0.01 S/D was employed to induce uniaxial tensile strain in the SiGe channel, leading to enhancement in electron mobility. Devices with gate length L_G down to 50 nm were fabricated. Up to 55% higher saturation drive current I_d,sat was achieved in the strained-SGOI nFETs over control devices. In addition, the incorporation of a tensile stress SiN liner improves I_d,sat by an additional 15%