Carrier Transport Characteristics of Sub-30 nm Strained N-Channel FinFETs Featuring Silicon-Carbon Source/Drain Regions and Methods for Further Performance Enhancement

Author

Liow, Tsung-Yang ; Tan, Kian-Ming ; Chin, Hock-Chun ; Lee, Rinus T P ; Tung, Chih-Hang ; Samudra, Ganesh S. ; Balasubramanian, N. ; Yeo, Yee-Chia

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

We report performance optimization techniques for FinFETs with Si _0.99C_0.01 source and drain (S/D) regions and sub-30 nm gate lengths. By scaling up the Si_0.99C_0.01 stressor thickness, a ~9% I_Dsat enhancement can be obtained. A further 16% I_Dsat enhancement can be achieved with the adoption of slim spacers. Carrier backscattering study was performed to clarify the carrier transport characteristics such as ballistic efficiency and carrier source injection, showing consistency with observed I_Dsat enhancement

Keywords

MOSFET; electron backscattering; silicon compounds; Si_0.99C_0.01; ballistic efficiency; carrier backscattering; carrier source injection; carrier transport characteristics; silicon-carbon source/drain regions; slim spacers; strained N-channel FinFET; Backscatter; Capacitive sensors; Etching; Fabrication; FinFETs; Implants; Lattices; Microelectronics; Optimization; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346815

Filename

4154234