Title :
Accurate Circuit Performance Prediction Model and Lifetime Prediction Method of NBT Stressed Devices for Highly Reliable ULSI Circuits
Author :
Kuroda, Rihito ; Watanabe, Kazufumi ; Teramoto, Akinobu ; Mifuji, Michihiko ; Yamaha, Takahisa ; Sugawa, Shigetoshi ; Ohmi, Tadahiro
Author_Institution :
Graduate Sch. of Eng., Tohoku Univ.
Abstract :
An accurate circuit level prediction model for predicting performance degradation due to negative bias temperature (NBT) stress and a device lifetime prediction method are proposed in this paper. The proposed model consists of a threshold voltage (Vth) shift and a drain current (ID) reduction models. The developed models are incorporated into a compact MOSFET model so that we can directly link the device electrical degradation to the circuit simulation. The validity of the developed models is confirmed by the experimental results of I-V characteristics of pMOSFET before and after stress. Then, the circuit performance prediction is carried out for a 199-stage ring oscillator on its waveform and oscillation frequency. Excellent agreements between experimental results and predicted results are obtained. Since only a suitable acceleration method allows us to develop the accurate models, the new negative bias temperature instability (NBTI) acceleration method using cold-holes is also developed. Finally, we demonstrate the accurate NBTI lifetime prediction using the method
Keywords :
MOSFET; carrier lifetime; circuit simulation; network synthesis; oscillators; semiconductor device models; semiconductor device reliability; thermal stresses; NBT stressed devices; NBTI acceleration method; ULSI circuits; circuit performance prediction model; circuit simulation; cold-holes; device electrical degradation; lifetime prediction method; negative bias temperature instability; negative bias temperature stress; oscillation frequency; pMOSFET; performance degradation; ring oscillator; Acceleration; Circuit optimization; Degradation; MOSFET circuits; Niobium compounds; Prediction methods; Predictive models; Stress; Titanium compounds; Ultra large scale integration;
Conference_Titel :
Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on
Conference_Location :
Padova
Print_ISBN :
1-4244-0097-X
DOI :
10.1109/ICICDT.2006.220826