Title :
CMOS and Interconnect Reliability - Non-Volatile Memory Reliability
Keywords :
Flash memory; High K dielectric materials; High-K gate dielectrics; Leakage current; Nonvolatile memory; Photonic band gap; Radioactive decay; SONOS devices; Telegraphy; Temperature dependence;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
DOI :
10.1109/IEDM.2006.346817
