DocumentCode
2387057
Title
CMOS and Interconnect Reliability - Non-Volatile Memory Reliability
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
1
Keywords
Flash memory; High K dielectric materials; High-K gate dielectrics; Leakage current; Nonvolatile memory; Photonic band gap; Radioactive decay; SONOS devices; Telegraphy; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Type
conf
DOI
10.1109/IEDM.2006.346817
Filename
4154236
Link To Document