• DocumentCode
    2387130
  • Title

    Analysis TAT reduction by using emission-leakage failure analysis system

  • Author

    Higuchi, Yasuhisa ; Kawaguchi, Yasumasa ; Sakazume, Tatsumi

  • Author_Institution
    Device Dev. Center, Hitachi Ltd., Tokyo, Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    269
  • Lastpage
    272
  • Abstract
    Current leakage is the major failure mode of semiconductor device characteristic failures. Conventionally, failures such as short circuit breaks and gate breakdowns have been analyzed and the detected causes have been reflected in the fabrication process. By using a wafer-level emission-leakage failure analysis method (in-line QC), we analyzed leakage mode failure, which is the major failure detected during the probe inspection process for LSIs, typically DRAMs and CMOS logic LSIs. We have thus developed a new technique that copes with the critical structural failures and random failures that directly affect probe yields
  • Keywords
    CMOS logic circuits; DRAM chips; failure analysis; inspection; integrated circuit reliability; integrated circuit testing; CMOS logic LSI; DRAM; analysis TAT reduction; current leakage; emission-leakage failure analysis system; failure mode; gate breakdowns; probe inspection process; semiconductor device characteristic failures; short circuit breaks; Circuits; Electric breakdown; Fabrication; Failure analysis; Inspection; Large scale integration; Microscopy; Probes; Semiconductor devices; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
  • Conference_Location
    Tokyo
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-7392-8
  • Type

    conf

  • DOI
    10.1109/ISSM.2000.993665
  • Filename
    993665