DocumentCode :
2387130
Title :
Analysis TAT reduction by using emission-leakage failure analysis system
Author :
Higuchi, Yasuhisa ; Kawaguchi, Yasumasa ; Sakazume, Tatsumi
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
fYear :
2000
fDate :
2000
Firstpage :
269
Lastpage :
272
Abstract :
Current leakage is the major failure mode of semiconductor device characteristic failures. Conventionally, failures such as short circuit breaks and gate breakdowns have been analyzed and the detected causes have been reflected in the fabrication process. By using a wafer-level emission-leakage failure analysis method (in-line QC), we analyzed leakage mode failure, which is the major failure detected during the probe inspection process for LSIs, typically DRAMs and CMOS logic LSIs. We have thus developed a new technique that copes with the critical structural failures and random failures that directly affect probe yields
Keywords :
CMOS logic circuits; DRAM chips; failure analysis; inspection; integrated circuit reliability; integrated circuit testing; CMOS logic LSI; DRAM; analysis TAT reduction; current leakage; emission-leakage failure analysis system; failure mode; gate breakdowns; probe inspection process; semiconductor device characteristic failures; short circuit breaks; Circuits; Electric breakdown; Fabrication; Failure analysis; Inspection; Large scale integration; Microscopy; Probes; Semiconductor devices; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
Conference_Location :
Tokyo
ISSN :
1523-553X
Print_ISBN :
0-7803-7392-8
Type :
conf
DOI :
10.1109/ISSM.2000.993665
Filename :
993665
Link To Document :
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