• DocumentCode
    2387147
  • Title

    Improving semiconductor manufacturing yields by using Raman spectroscopic analysis

  • Author

    Obara, T. ; Tanakadate, J. ; Chabata, T. ; Ishihara, K. ; Mieno, F. ; Yanagihara, F.

  • Author_Institution
    Iwate Plant Manuf. Technol. Dept., Fujitsu Ltd., Iwate, Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    273
  • Lastpage
    276
  • Abstract
    In order to implement effective countermeasures to improve yields, it is essential to analyze particles, clarify their material and determine their source in a short period of time. However, it took time to determine the source of particles using conventional particle analysis methods such as EDX and FT-IR, due to shortcomings arising from their measurement principles. Raman spectroscopic analysis is a method for analyzing particles which compensates for the insufficiencies of conventional analysis methods, so there is possibility that it will enable the determination of particle sources in a shorter period of time. We selected four types of 64 M D-RAM production equipment where particles originating from that manufacturing equipment were considered to be reducing yields
  • Keywords
    DRAM chips; Raman spectra; integrated circuit manufacture; integrated circuit measurement; integrated circuit yield; 64 Mbit; D-RAM production equipment; Raman spectroscopic analysis; semiconductor manufacturing yields improvement; Chemical analysis; Chemical elements; Diffraction; Inspection; Particle measurements; Raman scattering; Semiconductor device manufacture; Spectroscopy; Tiles; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
  • Conference_Location
    Tokyo
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-7392-8
  • Type

    conf

  • DOI
    10.1109/ISSM.2000.993666
  • Filename
    993666