DocumentCode
2387147
Title
Improving semiconductor manufacturing yields by using Raman spectroscopic analysis
Author
Obara, T. ; Tanakadate, J. ; Chabata, T. ; Ishihara, K. ; Mieno, F. ; Yanagihara, F.
Author_Institution
Iwate Plant Manuf. Technol. Dept., Fujitsu Ltd., Iwate, Japan
fYear
2000
fDate
2000
Firstpage
273
Lastpage
276
Abstract
In order to implement effective countermeasures to improve yields, it is essential to analyze particles, clarify their material and determine their source in a short period of time. However, it took time to determine the source of particles using conventional particle analysis methods such as EDX and FT-IR, due to shortcomings arising from their measurement principles. Raman spectroscopic analysis is a method for analyzing particles which compensates for the insufficiencies of conventional analysis methods, so there is possibility that it will enable the determination of particle sources in a shorter period of time. We selected four types of 64 M D-RAM production equipment where particles originating from that manufacturing equipment were considered to be reducing yields
Keywords
DRAM chips; Raman spectra; integrated circuit manufacture; integrated circuit measurement; integrated circuit yield; 64 Mbit; D-RAM production equipment; Raman spectroscopic analysis; semiconductor manufacturing yields improvement; Chemical analysis; Chemical elements; Diffraction; Inspection; Particle measurements; Raman scattering; Semiconductor device manufacture; Spectroscopy; Tiles; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
0-7803-7392-8
Type
conf
DOI
10.1109/ISSM.2000.993666
Filename
993666
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