• DocumentCode
    2387163
  • Title

    Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory

  • Author

    Gu, S.H. ; Li, C.W. ; Wang, Tahui ; Lu, W.P. ; Chen, K.C. ; Ku, Joseph ; Lu, Chih-Yuan

  • Author_Institution
    Macronix Int. Co. Ltd., Hsin-Chu
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Program/erase cycling stress induced read current fluctuations arising from random telegraph noise (RTN) in a localized storage, multi-level nitride flash memory (SONOS) is explored. Our study shows that localized charge storage significantly enhances RTN. The amplitude of RTN varies in different program levels of a multi-level cell. The broadening of read current distribution due to RTN is characterized and modeled. Improvement of bottom oxide robustness can reduce the read current fluctuations
  • Keywords
    charge storage diodes; flash memories; semiconductor device noise; localized charge storage; multilevel SONOS flash memory; random telegraph noise; read current instability; CMOS technology; Current measurement; Electronics industry; Flash memory; Fluctuations; Industrial electronics; SONOS devices; Sampling methods; Stress; Telegraphy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0438-X
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346820
  • Filename
    4154239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2387163