Reliability Model of Bandgap Engineered SONOS (BE-SONOS)

Author

Lue, Hang Ting ; Wang, Szu Yu ; Hsiao, Yi Hsuan ; Lai, Erh Kun ; Yang, Ling Wu ; Yang, Tahone ; Chen, Kuang Chao ; Hsieh, Kuang Yeu ; Liu, Rich ; Lu, Chih Yuan

Author_Institution

Emerging Central Lab., Hsinchu

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

Reliability properties of bandgap engineered SONOS (BE-SONOS) (Lue et al., 2005) are extensively studied. First, the erase mechanism of BE-SONOS is confirmed as substrate hole tunneling through the ultra-thin ONO tunneling dielectric. Next, very long-term (>3,000 hours) high-temperature baking data (from 150 to 250degC) for various programmed/erased states and cycling history are collected and analyzed for a thorough understanding of the retention property. By transforming retention data (V_FB-time) into de-trapping current (J) and modeling its dependence on electric field and temperature, the long-term retention of various programmed states are consistently and accurately predicted. This modeling technique avoids the ambiguity of the common Arrhenius plot, and is useful for developing other predictive models too. We have shown that BE-SONOS surpasses the 10-year 85degC storage criterion for Flash memory applications

Keywords

flash memories; semiconductor device models; semiconductor device reliability; bandgap engineered SONOS; flash memory applications; reliability model; substrate hole tunneling; Degradation; Dielectric substrates; Electron traps; Flash memory; Photonic band gap; Predictive models; Reliability engineering; SONOS devices; Stress; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346822

Filename

4154241