DocumentCode
2387258
Title
[Front cover]
fYear
2006
fDate
15-16 May 2006
Abstract
The following topics were dealt with: CMOS technology; ion implantation; semiconductor doping; ultra-shallow junction formation; annealing; silicides; Schottky source-drain MOSFET; Si-based structures and devices; semiconductor heterojunction devices and contacts; device modeling and characterization; and semiconductor industry
Keywords
CMOS integrated circuits; MOSFET; Schottky barriers; annealing; ion implantation; ohmic contacts; semiconductor device manufacture; semiconductor device models; semiconductor doping; semiconductor heterojunctions; CMOS technology; Schottky source-drain MOSFET; Si-based devices; Si-based structures; annealing; contacts; device characterization; device modeling; ion implantation; semiconductor doping; semiconductor heterojunction devices; semiconductor industry; silicides; ultra-shallow junction formation;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location
Shanghai
Print_ISBN
1-4244-0047-3
Type
conf
DOI
10.1109/IWJT.2006.220839
Filename
1669426
Link To Document