Title :
Capacitive Bulk Acoustic Wave Silicon Disk Gyroscopes
Author :
Johari, Houri ; Ayazi, Farrokh
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
This paper introduces the capacitive bulk acoustic wave (BAW) silicon disk gyroscope. The capacitive BAW disk gyroscopes operate in the frequency range of 2-8MHz, are stationary devices with vibration amplitudes less than 20nm, and achieve very high quality factors (Q) in low vacuum (and even in atmosphere), which simplifies their wafer-scale packaging. The device has lower operating voltages compared to low-frequency gyroscopes, which simplifies the interface circuit design and implementation in standard CMOS
Keywords :
CMOS integrated circuits; Q-factor; bulk acoustic wave devices; gyroscopes; wafer level packaging; 2 to 8 MHz; CMOS technology; bulk acoustic waves; capacitive BAW disk gyroscopes; quality factors; wafer-scale packaging; Acoustic waves; Electrodes; Frequency; Gyroscopes; Noise level; Noise reduction; Packaging; Q factor; Silicon; Stability;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346827
