Title :
MUGFET - alternative transistor architecture for 32 nm CMOS generation
Author :
Jurczak, M. ; Collaert, N. ; Rooyackers, R. ; Kottantharayil, A. ; Dixit, A. ; Ferain, I. ; San, T. ; Son, N.-J. ; Lenoble, D. ; Zimmerman, P. ; De Keersgieter, A. ; Von Arnim, K. ; Ramos, J. ; Mercha, A. ; Verheyen, P.
Author_Institution :
IMEC, Leuven
Abstract :
In this paper, the suitability of the MUGFET technology as an alternative device architecture for 32 nm CMOS generation is discussed. In particular, the requirements for the MUGFET devices with focus on FIN geometry, gate stack, and junctions are analyzed. Technological challenges related to the processing of MUGFET devices such as, FIN and gate patterning, junctions and spacer formation, are also presented
Keywords :
CMOS integrated circuits; MOSFET; nanopatterning; silicon-on-insulator; 32 nm; 32 nm CMOS technology; FIN geometry; MUGFET technology; device architecture; double gate devices; gate patterning; gate stack; junctions depth; short channel effect; spacer formation; CMOS technology; Capacitance; Fluctuations; Geometry; Microelectronics; Space technology; Tunneling;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220846
