Title :
A Formation of Si Native Oxide Membrane Using High-Selectivity Etching and Applications for Nano-Pipe Array and Micro-Diaphragm on Si Substrate
Author :
Sugino, Rinji ; Ito, Takashi
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai
Abstract :
A novel technique in creating a cavity by using a membrane of Si-native oxide has been developed. The membrane of Si-native oxide was formed by high-selectivity Cl2 etching of Si which surface was treated by wet chemicals. Following film deposition onto the membrane which was supported by SiO2 mask can make a cavity in the substrate. The advantage of this technique is its ability to maintain the CD of cavity even after film deposition to seal the via-opening
Keywords :
chemical vapour deposition; chlorine; etching; nanoelectronics; silicon; silicon compounds; Cl2; SiO2; chemical vapour deposition; critical dimension; film deposition; high-selectivity etching; nano-pipe array; native oxide membrane; wet chemical treatment; Biomembranes; Chemicals; Resists; Scanning electron microscopy; Semiconductor films; Substrates; Surface treatment; Temperature; Visualization; Wet etching;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346831
