• DocumentCode
    2387428
  • Title

    A Formation of Si Native Oxide Membrane Using High-Selectivity Etching and Applications for Nano-Pipe Array and Micro-Diaphragm on Si Substrate

  • Author

    Sugino, Rinji ; Ito, Takashi

  • Author_Institution
    Dept. of Electron. Eng., Tohoku Univ., Sendai
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A novel technique in creating a cavity by using a membrane of Si-native oxide has been developed. The membrane of Si-native oxide was formed by high-selectivity Cl2 etching of Si which surface was treated by wet chemicals. Following film deposition onto the membrane which was supported by SiO2 mask can make a cavity in the substrate. The advantage of this technique is its ability to maintain the CD of cavity even after film deposition to seal the via-opening
  • Keywords
    chemical vapour deposition; chlorine; etching; nanoelectronics; silicon; silicon compounds; Cl2; SiO2; chemical vapour deposition; critical dimension; film deposition; high-selectivity etching; nano-pipe array; native oxide membrane; wet chemical treatment; Biomembranes; Chemicals; Resists; Scanning electron microscopy; Semiconductor films; Substrates; Surface treatment; Temperature; Visualization; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0438-X
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346831
  • Filename
    4154250