DocumentCode
2387428
Title
A Formation of Si Native Oxide Membrane Using High-Selectivity Etching and Applications for Nano-Pipe Array and Micro-Diaphragm on Si Substrate
Author
Sugino, Rinji ; Ito, Takashi
Author_Institution
Dept. of Electron. Eng., Tohoku Univ., Sendai
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
A novel technique in creating a cavity by using a membrane of Si-native oxide has been developed. The membrane of Si-native oxide was formed by high-selectivity Cl2 etching of Si which surface was treated by wet chemicals. Following film deposition onto the membrane which was supported by SiO2 mask can make a cavity in the substrate. The advantage of this technique is its ability to maintain the CD of cavity even after film deposition to seal the via-opening
Keywords
chemical vapour deposition; chlorine; etching; nanoelectronics; silicon; silicon compounds; Cl2; SiO2; chemical vapour deposition; critical dimension; film deposition; high-selectivity etching; nano-pipe array; native oxide membrane; wet chemical treatment; Biomembranes; Chemicals; Resists; Scanning electron microscopy; Semiconductor films; Substrates; Surface treatment; Temperature; Visualization; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346831
Filename
4154250
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