Author :
Yeo, Kyoung Hwan ; Suk, Sung Dae ; Li, Ming ; Yeoh, Yun-young ; Cho, Keun Hwi ; Hong, Ki-Ha ; Yun, SeongKyu ; Lee, Mong Sup ; Cho, Nammyun ; Lee, Kwanheum ; Hwang, Duhyun ; Park, Bokkyoung ; Kim, Dong-Won ; Park, Donggun ; Ryu, Byung-Il
Abstract :
GAA TSNWFET with 15 nm gate length and 4 nm radius nanowires is demonstrated and shows excellent short channel immunity. p-TSNWFET shows high driving current of 1.94 mA/mum while n-TSNWFET shows on-current of 1.44 mA/mum. Merits of TSNWFET and performance enhancement of p-TSNWFET are explored using 3D and quantum simulation
Keywords :
MOSFET; nanowires; 15 nm; 4 nm; TSNWFET; performance enhancement; quantum simulation; short channel immunity; twin silicon nanowire MOSFET; Delay; Effective mass; Electronic equipment testing; Fabrication; Germanium silicon alloys; Immune system; MOSFET circuits; Nanoscale devices; Silicon germanium; Tin;
