Simulating Enhanced Diffusion and Activation of Boron by Atomistic Model

Author

Yu, Min ; Zhang, Xiao ; Ren, Liming ; Huihui Ji ; Zhan, Kai ; Huang, Ru ; Zhang, Xing ; Wang, Yangyuan ; Zhang, Jinyu ; Oka, Hideki

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

fYear

0

fDate

0-0 0

Firstpage

36

Lastpage

39

Abstract

The kinetic Monte Carlo (KMC) method has been the applicable method for the investigation on annealing process. In this paper, the simulation on both enhanced diffusion and inactivation of B is presented. The inactivation and clustering of B implanted at 0.5 keV and annealed at 900degC~1200degC are correctly simulated. The model can also correctly simulate the enhanced diffusion of B introduced by ultra-low energy implantation or pre-doping. Analysis on the evolution of B-Si clusters in annealing is performed

Keywords

Monte Carlo methods; annealing; boron; diffusion; elemental semiconductors; ion implantation; segregation; semiconductor doping; semiconductor process modelling; silicon; 0.5 keV; 900 degC; Si:B; annealing; atomistic model; boron activation; clustering; dopant inactivation; enhanced diffusion; kinetic Monte Carlo method; predoping; shallow junction technology; ultralow energy implantation; Boron; Chaos; Kinetic theory; Laboratories; Microelectronics; Monte Carlo methods; Research and development; Semiconductor process modeling; Simulated annealing; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2006. IWJT '06. International Workshop on

Conference_Location

Shanghai

Print_ISBN

1-4244-0047-3

Type

conf

DOI

10.1109/IWJT.2006.220855

Filename

1669442