Maximizing Boron Activation in Solid Phase Epitaxy - A Case of Implant Choice and RTP Processing

Author

Funk, K. ; Verheyden, K. ; Krull, W. ; Pages, X. ; Hapert, Jv. ; Granneman, E.

Author_Institution

ASM Eur., Almere

fYear

2006

fDate

15-16 May 2006

Firstpage

40

Lastpage

43

Abstract

Solid phase epitaxial regrowth (SPER) has been re-evaluated using molecular boron implantation techniques (B₁₈H₂₂) for the purpose of source/drain extensions as well as for the NFET´s halo implants. It had been found that reverse annealing can be omitted. The well documented benefits of fast ramp spike temperature profiles allow the use of highly activating anneals above 800degC without significant de-activation, though extending the useful SPER temperature regime and still limiting diffusion. Typical dopant concentrations for halo implants can get significantly activated during low temperature SPER anneals for those implants

Keywords

CMOS integrated circuits; amorphisation; annealing; boron compounds; diffusion; field effect transistors; interstitials; ion implantation; rapid thermal processing; solid phase epitaxial growth; CMOS; NFET halo implants; RTP processing; annealing; diffusion; dopant activation; high ramp rate spike anneals; interstitials; molecular boron implantation; self-amorphization; solid phase epitaxial regrowth; source-drain extension; Annealing; Boron; Computer aided software engineering; Epitaxial growth; Europe; Helium; Implants; Leakage current; Solids; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2006. IWJT '06. International Workshop on

Conference_Location

Shanghai

Print_ISBN

1-4244-0047-3

Type

conf

DOI

10.1109/IWJT.2006.220856

Filename

1669443